Whole-wafer fabrication process for three-terminal double stacked tunnel junctions

被引：4
|
作者：
Pepe, GP
Peluso, G
Scaldaferri, R
Parlato, L
Granata, C
Esposito, E
Russo, M
机构：
[1] Univ Naples Federico II, Dipartimento Sci Fisiche, I-80125 Naples, Italy
[2] INFM, UdR Napoli, I-80125 Naples, Italy
[3] Seconda Univ Napoli, Dipartimento Ingn Informaz, I-81031 Aversa, CE, Italy
[4] CNR, Ist Cibernet, I-80078 Naples, Italy
来源：
EUROPEAN PHYSICAL JOURNAL B | 2001年 / 23卷 / 04期
关键词：
D O I：
10.1007/s100510170032
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A new fabrication process for three-terminal superconducting devices consisting of two Josephson junctions in a stacked configuration is reported. The process is based on the deposition of the whole Nb/AlxOy/Nb-Al/AlxOy/Nb multilayer on a Si crystalline wafer without any vacuum breaking. Lift-off techniques, anodization processes and a SiO film deposition have been adopted for patterning and insulating the two tunnel stacked junctions. Devices have been characterized in terms of current-voltage (I-V) curves and Josephson critical current vs. the externally applied magnetic field. They show high quality factors (V-m values up to 65 mV at 4.2 K), and good current uniformity.
引用
收藏
页码：421 / 425
页数：5
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