Oxidation kinetics of low-oxygen silicon carbide fiber

被引：0
|
作者：
T. Shimoo
F. Toyoda
K. Okamura
机构：
[1] Osaka Prefecture University,Department of Metallurgy and Materials Science, College of Engineering
[2] Osaka Prefecture University,undefined
来源：
Journal of Materials Science | 2000年 / 35卷
关键词：
Oxidation; Oxygen; Polymer; SiO2; Carbide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of partial pressure and temperature on the oxidation rate of low-oxygen silicon carbide fiber (Hi-Nicalon) has been investigated. The initial oxidation rate was described by a two-dimensional disc contracting formula for reaction control, and the activation energy was 155 kJ/mol. The rate at the later stage of oxidation obeyed the equation for diffusion control, and the activation energy was 109 kJ/mol. Both the rate constants were proportional to oxygen partial pressure. The diffusion species through the SiO2 film are considered to be oxygen molecules.
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页码：3301 / 3306
页数：5
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