Multiple periodicity in a nanoparticle-based single-electron transistor

被引:0
|
作者
O. Bitton
D. B. Gutman
R. Berkovits
A. Frydman
机构
[1] Weizmann Institute of Science,Chemical Research Support department
[2] Bar Ilan University,The Institute of Nanotechnology and Advanced Materials, The Department of Physics
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
A single-electron transistor is a nano-device with large potential for low-power applications that can be used as logic elements in integrated circuits. In this device, the conductance oscillates with a well-defined period due to the Coulomb blockade effect. By using a unique technique, we explore single-electron transistors based on a single metallic nanoparticle with tunable coupling to electric leads. We demonstrate a unique regime in which the transistor is characterized by multi-periodic oscillations of the conductance with gate voltage where the additional periods are harmonics of the basic periodicity of the Coulomb blockade and their relative strength can be controllably tuned. These harmonics correspond to a charge change on the dot by a fraction of the electron charge. The presence of multiple harmonics makes these transistors potential elements in future miniaturization of nano-sized circuit elements.
引用
收藏
相关论文
共 50 条
  • [31] Strong tunneling in the single-electron transistor
    Joyez, P
    Bouchiat, V
    Esteve, D
    Urbina, C
    Devoret, MH
    PHYSICAL REVIEW LETTERS, 1997, 79 (07) : 1349 - 1352
  • [32] Sketched oxide single-electron transistor
    Cheng, Guanglei
    Siles, Pablo F.
    Bi, Feng
    Cen, Cheng
    Bogorin, Daniela F.
    Bark, Chung Wung
    Folkman, Chad M.
    Park, Jae-Wan
    Eom, Chang-Beom
    Medeiros-Ribeiro, Gilberto
    Levy, Jeremy
    NATURE NANOTECHNOLOGY, 2011, 6 (06) : 343 - 347
  • [33] Effective capacitance of a single-electron transistor
    Laakso, M. A.
    Ojanen, T.
    Heikkila, T. T.
    PHYSICAL REVIEW B, 2008, 77 (23):
  • [34] Cotunneling at resonance for the single-electron transistor
    Konig, J
    Schoeller, H
    Schon, G
    PHYSICAL REVIEW LETTERS, 1997, 78 (23) : 4482 - 4485
  • [35] Broadband single-electron tunneling transistor
    Visscher, EH
    Lindeman, J
    Verbrugh, SM
    Hadley, P
    Mooij, JE
    vanderVleuten, W
    APPLIED PHYSICS LETTERS, 1996, 68 (14) : 2014 - 2016
  • [36] The Kondo effect in a single-electron transistor
    Goldhaber-Gordon, D
    Göres, J
    Shtrikman, H
    Mahalu, D
    Meirav, U
    Kastner, MA
    KONDO EFFECT AND DEPHASING IN LOW-DIMENSIONAL METALLIC SYSTEMS, 2001, 50 : 163 - 170
  • [37] Coulomb Blockade and Multiple Andreev Reflection in a Superconducting Single-Electron Transistor
    Thomas Lorenz
    Susanne Sprenger
    Elke Scheer
    Journal of Low Temperature Physics, 2018, 191 : 301 - 315
  • [38] Effects of overheating in a single-electron transistor
    1600, American Inst of Physics, Woodbury, NY, USA (76):
  • [39] Nonlinear thermovoltage in a single-electron transistor
    Erdman, P. A.
    Peltonen, J. T.
    Bhandari, B.
    Dutta, I. B.
    Courtois, H.
    Fazio, R.
    Taddei, F.
    Pekola, J. P.
    PHYSICAL REVIEW B, 2019, 99 (16)
  • [40] Coulomb Blockade and Multiple Andreev Reflection in a Superconducting Single-Electron Transistor
    Lorenz, Thomas
    Sprenger, Susanne
    Scheer, Elke
    JOURNAL OF LOW TEMPERATURE PHYSICS, 2018, 191 (5-6) : 301 - 315