Room temperature ferromagnetism of Ni, (Ni, Li), (Ni, N)-doped ZnO thin films

被引：0
|
作者：
XiaoJuan Ye
HaiAn Song
Wei Zhong
XiaoSi Qi
MeiHua Xu
ChangQing Jin
ZaiXin Yang
ChakTong Au
YouWei Du
机构：
[1] Nanjing University,National Laboratory of Solid State Microstructures
[2] Hong Kong Baptist University,Chemistry Department
来源：
Science China Technological Sciences | 2010年 / 53卷
关键词：
semiconductors; thin films; chemical synthesis; electronic states (localized);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Ni-doped ZnO thin films (Ni concentration up to 10 mol%) were generated on Si (100) substrates by a sol-gel technique. The films showed wurtzite structure and no other phase was found. The chemical state of Ni was found to be bivalent by X-ray photoelectron spectroscopy. The results of magnetic measurements at room temperature indicated that the films were ferromagnetic, and magnetic moment decreased with rise of Ni concentration. The magnetization of Ni (10 mol%)-doped ZnO film annealed in nitrogen was lower than that annealed in argon, suggesting that the density of defects had an effect on ferromagnetism.
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页码：293 / 296
页数：3
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