Zinc electrodeposition;
Chloride ion;
Deep eutectic solvent;
Zinc recover;
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摘要:
When deep eutectic solvent (DES) is used to recycle Zn from zinc-containing dusts, chlorine present in these dusts will enter into the resulting solution and inevitably affects subsequent electrodeposition of zinc. This paper investigated the effect of added chloride ions on the electrodeposition behavior of zinc from choline chloride-urea-ethylene glycol (ChCl-urea-EG) DES-containing zinc oxide. Compared with the blank ChCl-urea-EG DES, the addition of chloride ion is found to increase the current efficiency, reduce the energy consumption, and improve the compactness of Zn deposits. In addition, cyclic voltammetry results and kinetic parameters lead to the conclusion that the added chloride ions have an inhibiting effect on Zn(II) ion migration, but have a promoting effect on reduction reaction of Zn(II) ion. The results of X-ray diffraction analysis reveal that the addition of chloride ions affects the crystallographic orientation by enhancing the growth of (101), (102), and (103) planes.
机构:
CEST Competence Ctr Electrochem Surface Technol G, Wiener Neustadt, AustriaCEST Competence Ctr Electrochem Surface Technol G, Wiener Neustadt, Austria
Poelzler, Matthias
Whitehead, Adam H.
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CEST Competence Ctr Electrochem Surface Technol G, Wiener Neustadt, AustriaCEST Competence Ctr Electrochem Surface Technol G, Wiener Neustadt, Austria
Whitehead, Adam H.
Gollas, Bernhard
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CEST Competence Ctr Electrochem Surface Technol G, Wiener Neustadt, AustriaCEST Competence Ctr Electrochem Surface Technol G, Wiener Neustadt, Austria
Gollas, Bernhard
PHYSICAL AND ANALYTICAL ELECTROCHEMISTRY IN IONIC LIQUIDS,
2010,
25
(39):
: 43
-
55
机构:
School of Chemical Engineering, Western Parana State University–Unioeste, Paraná, ToledoSchool of Chemical Engineering, Western Parana State University–Unioeste, Paraná, Toledo
dos Santos M.R.M.
Teleken J.G.
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机构:
Engineering and Exact Department, Federal University of Paraná-UFPR, Paraná, PalotinaSchool of Chemical Engineering, Western Parana State University–Unioeste, Paraná, Toledo
Teleken J.G.
Tavares F.
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School of Chemical Engineering, Western Parana State University–Unioeste, Paraná, ToledoSchool of Chemical Engineering, Western Parana State University–Unioeste, Paraná, Toledo
Tavares F.
da Silva E.A.
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机构:
School of Chemical Engineering, Western Parana State University–Unioeste, Paraná, ToledoSchool of Chemical Engineering, Western Parana State University–Unioeste, Paraná, Toledo
机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Fashu, S.
Gu, C. D.
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Gu, C. D.
Zhang, J. L.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Zhang, J. L.
Bai, W. Q.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Bai, W. Q.
Wang, X. L.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Wang, X. L.
Tu, J. P.
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China