Donor-acceptor recombination in type-II GaAs/AlAs superlattices

被引：0
|
作者：
K. S. Zhuravlev
A. M. Gilinskii
T. S. Shamirzaev
V. V. Preobrazhenskii
B. R. Semyagin
M. A. Putyato
S. S. Chipkin
机构：
[1] Siberian Branch of the Russian Academy of Sciences,Institute of Semiconductor Physics
[2] Siberian State Geodetic Academy,undefined
来源：
Physics of the Solid State | 1998年 / 40卷
关键词：
Spectroscopy; State Physics; Recombination; GaAs; Binding Energy;
D O I：
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中图分类号：
学科分类号：
摘要：
A study is reported of steady-and nonsteady-state photoluminescence of intentionally undoped and uniformly silicon-doped type-II (GaAs)7(AlAs)9 superlattices grown by MBE simultaneously on (311)A-and (100)-oriented GaAs substrates. It has been established that at elevated temperatures (160>T>30 K) the superlattice spectra are dominated by the line due to the donor-acceptor recombination between donors in the AlAs layers and acceptors located in the GaAs layers. The total carrier binding energy to the donor and acceptor in a pair has been determined.
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页码：1577 / 1581
页数：4
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