Donor-acceptor recombination in δ-doped type IIGaAs/AlAs superlattices

被引：2
|
作者：
Gulyaev, D [1 ]
Gilinsky, AM [1 ]
Toropov, AI [1 ]
Bakarov, AK [1 ]
Zhuravlev, KS [1 ]
机构：
[1] Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
PHYSICA B-CONDENSED MATTER | 2001年 / 308卷
关键词：
superlattice; photoluminescence; impurity;
D O I：
10.1016/S0921-4526(01)00803-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of a study of peculiarities of donor-acceptor recombination in delta-doped type II GaAs/AlAs superlattices are presented. The binding energies of donors and acceptors in the superlattices have been determined. The possibility of donor-acceptor recombination in superlattices with impurities separated by several undoped layers has been demonstrated. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：784 / 787
页数：4
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