Erbium-doped oxidized porous silicon for integrated optical waveguides

被引：0
|
作者：
V. P. Bondarenko
V. A. Yakovtseva
L. N. Dolgii
N. N. Vorozov
N. M. Kazyuchits
L. Tsybeskov
F. Foucher
机构：
[1] Belorussian State University for Informatics and Radio Electronics,
[2] Belorussian State University,undefined
[3] Rochester University,undefined
来源：
Technical Physics Letters | 1999年 / 25卷
关键词：
Silicon; Active State; Porous Silicon; Erbium; Optical Waveguide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is shown for the first time that introducing erbium lectrochemically into waveguide structures based on oxidized porous silicon not only preserves their waveguide properties but it also opens up prospects for producing active waveguide devices based on them. It is established that erbium in a waveguide is in an optically active state and light with wavelengths 381 and 523 nm excites the erbium ions most efficiently.
引用
收藏
页码：705 / 706
页数：1
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