Nickel silicidation techniques for strained Si1−xGex, Si1−x−yGexCy, and Si1−yCy alloys material-device applications

A nickel silicide process for Si1-xGex, Si1-x-yGexCy, and Si1-yCy alloy materials compatible with Si technology has been developed. Low-resistivity-phase (12–20 µΘ cm) nickel silicides have been obtained for these alloys with different low sheet-resistance temperature windows. The study shows that thin (15–18 nm) silicide layers with high crystalline quality, smooth silicide surface, and smooth interface between silicide and the underlying material are achievable. The technique could be used to combine the benefits of Ni silicide and Si1-xGex, Si1-x-yGexCy, and Si1-yCy alloys. The technique is promising for Si or Si1-xGex, Si1-x-yGexCy, and Si1-yCy alloy-based metal-oxide semiconductor, field-effect transistors (MOSFETs) or other device applications.