Effect of Cr, Hf and temperature on interface reaction between nickel melt and silicon oxide core

被引:0
|
作者
Qing Li
Jinxia Song
Dinggang Wang
Qian Yu
Chengbo Xiao
机构
[1] Beijing Institute of Aeronautical Materials,National Key Laboratory of Science and Technology on Advanced High Temperature Structural Materials
来源
Rare Metals | 2011年 / 30卷
关键词
nickel superalloy; interface reaction; Cr; Hf;
D O I
暂无
中图分类号
学科分类号
摘要
Effects of Cr, Al and Hf, varied from 0–32 wt.%, 1–7.5 wt.% and 0.3–1.5 wt.% respectively, on reactions between nickel base alloy melt and silicon oxide core were investigated in this paper. Role of temperature also was studied. Morphology and structures of reaction products were analyzed by scanning electron microscope (SEM) with the energy dispersive spectrometry (EDS) and the X-ray diffraction (XRD) technique. Amount of alumina in interface increased with Cr level, and formed a layer with thickness up to several microns in alloy of 32 wt.% Cr, and 1 wt.% Al. Reaction products in alloy without Hf were mainly alumina, while in alloy with Hf were mainly hafnium oxides and alumina. More hafnium oxides were formed in alloy with 1.5 wt.%Hf and 9 wt.% Cr, while more alumina formed in alloy with 0.3 wt.%Hf and 15 wt.%Cr, a double layer of reaction products formed at the temperature of 1540 °C, which were composed of a hafnium oxide layer near the metal and a alumina layer above it. The result shows that Cr, Hf levels in the alloy and reaction temperature have the effect of accelerating interface reaction.
引用
收藏
页码:405 / 409
页数:4
相关论文
共 50 条
  • [21] Oxygen-evolution reaction by nickel/nickel oxide interface in the presence of ferrate(VI)
    Akbari, Mohammad Saleh Ali
    Bagheri, Robabeh
    Song, Zhenlun
    Najafpour, Mohammad Mahdi
    SCIENTIFIC REPORTS, 2020, 10 (01)
  • [22] The interface between silicon and a high-k oxide
    Först, CJ
    Ashman, CR
    Schwarz, K
    Blöchl, PE
    NATURE, 2004, 427 (6969) : 53 - 56
  • [23] The interface between silicon and a high-k oxide
    Clemens J. Först
    Christopher R. Ashman
    Karlheinz Schwarz
    Peter E. Blöchl
    Nature, 2004, 427 : 53 - 56
  • [24] Control of the interface reaction between silicon carbide and iron
    Tang, WM
    Zheng, ZX
    Ding, HF
    Jin, ZH
    MATERIALS CHEMISTRY AND PHYSICS, 2003, 80 (01) : 360 - 365
  • [25] Controlling the redox reaction at the interface between sealing glasses and Cr-containing interconnect: Effect of competitive reaction
    Chen, Shunrun
    Lin, Jianxin
    Yang, Hsiwen
    Tang, Dian
    Zhang, Teng
    JOURNAL OF POWER SOURCES, 2014, 267 : 753 - 759
  • [26] EFFECT OF SILICON ON BEHAVIOR OF A NICKEL-OXIDE ELECTRODE
    UFLYAND, NY
    NOVAKOVSKII, AM
    YASHKOV, MP
    ZUBOVA, NV
    KUZMIN, YA
    SOVIET ELECTROCHEMISTRY, 1975, 11 (01): : 102 - 104
  • [27] Solid-Liquid Interface Energy between Silicon Crystal and Silicon-Aluminum Melt
    Zengyun Jian
    Xiaoqin Yang
    Fange Chang
    Wanqi Jie
    Metallurgical and Materials Transactions A, 2010, 41 : 1826 - 1835
  • [28] The effect of substrate temperature and interface oxide layer on aluminum induced crystallization of sputtered amorphous silicon
    Hossain, M
    Abu-Safe, H
    Barghouti, M
    Naseem, H
    Brown, WD
    AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004, 2004, 808 : 315 - 320
  • [29] Solid-Liquid Interface Energy between Silicon Crystal and Silicon-Aluminum Melt
    Jian, Zengyun
    Yang, Xiaoqin
    Chang, Fange
    Jie, Wanqi
    METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 2010, 41A (07): : 1826 - 1835
  • [30] Effect of gold on the nickel/silicon thin film reaction
    Mangelinck, D
    Gas, P
    Gay, JM
    Pichaud, B
    JOURNAL DE PHYSIQUE IV, 1996, 6 (C2): : 97 - 102