Pressure Sensors Using Si/ZnO Heterojunction Diode

被引：0
|
作者：
P. Suveetha Dhanaselvam
D. Sriram Kumar
V. N. Ramakrishnan
K. Ramkumar
N. B. Balamurugan
机构：
[1] Velammal College of Engineering and Technology,Department of Electronics and Communication Engineering
[2] National Institute of Technology,Department of Electronics and Communication Engineering
[3] Vellore Institute of Technology,School of Electronics Engineering
[4] Thyagarajar College of Engineering,Department of Electronics and Communication Engineering
来源：
Silicon | 2022年 / 14卷
关键词：
Heterojunction diode; Biosensors;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In nanoregime, heterojunction diodes have efficient applications in design and fabrication of sensors. Heterojunction diodes are formed by fusing two dissimilar semiconductors. Based on the combination of the materials used, these heterostructures find applications in bioelectronics and miniaturized sensors. In the literature, many different combinations are prevailing –GaN/AlGaN, Au/ZnO, NiO/ZnO. In this paper, a heterojunction diode is designed using Si/ ZnO combination and for the first time,the device is discovered to be used as pressure sensors.. The IV characteristics, energy band profile and CV curves of Si/ZnO is studied, analyzed and validated using TCAD-ATLAS software. This paper also proves that the performance of the device fits well for pressure sensing applications using COMSOL software.
引用
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页码：4121 / 4127
页数：6
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