MOS solar cells with oxides deposited by sol-gel spin-coating techniques

被引：0
|
作者：
Chia-Hong Huang
Chung-Cheng Chang
Jung-Hui Tsai
机构：
[1] National Kaohsiung Normal University,Department of Electronic Engineering
[2] National Taiwan Ocean University,Department of Electrical Engineering
来源：
Semiconductors | 2013年 / 47卷
关键词：
Thermal Grown Oxide; Thermal Grown Oxide Layer; Composition Depth Profile; Derive Silicon Dioxide; Heat Treatment Tempera Ture;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The metal-oxide-semiconductor (MOS) solar cells with sol-gel derived silicon dioxides (SiO2) deposited by spin coating are proposed in this study. The sol-gel derived SiO2 layer is prepared at low temperature of 450°C. Such processes are simple and low-cost. These techniques are, therefore, useful for largescale and large-amount manufacturing in MOS solar cells. It is observed that the short-circuit current (Isc) of 2.48 mA, the open-circuit voltage (Vos) of 0.44 V, the fill factor (FF) of 0.46 and the conversion efficiency (η%) of 2.01% were obtained by means of the current-voltage (I–V) measurements under AM 1.5 (100 mW/cm2) irradiance at 25°C in the MOS solar cell with sol-gel derived SiO2.
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页码：835 / 837
页数：2
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