MOS solar cells with oxides deposited by sol-gel spin-coating techniques

被引：3
|
作者：
Huang, Chia-Hong [1 ]
Chang, Chung-Cheng [2 ]
Tsai, Jung-Hui [1 ]
机构：
[1] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung 82444, Taiwan
[2] Natl Taiwan Ocean Univ, Dept Elect Engn, Keelung 20224, Taiwan
来源：
SEMICONDUCTORS | 2013年 / 47卷 / 06期
关键词：
Thermal Grown Oxide; Thermal Grown Oxide Layer; Composition Depth Profile; Derive Silicon Dioxide; Heat Treatment Tempera Ture;
D O I：
10.1134/S1063782613060092
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The metal-oxide-semiconductor (MOS) solar cells with sol-gel derived silicon dioxides (SiO2) deposited by spin coating are proposed in this study. The sol-gel derived SiO2 layer is prepared at low temperature of 450A degrees C. Such processes are simple and low-cost. These techniques are, therefore, useful for largescale and large-amount manufacturing in MOS solar cells. It is observed that the short-circuit current (I (sc)) of 2.48 mA, the open-circuit voltage (V (os)) of 0.44 V, the fill factor (FF) of 0.46 and the conversion efficiency (eta%) of 2.01% were obtained by means of the current-voltage (I-V) measurements under AM 1.5 (100 mW/cm(2)) irradiance at 25A degrees C in the MOS solar cell with sol-gel derived SiO2.
引用
收藏
页码：835 / 837
页数：3
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