Structural and electronic properties of (CdTe)1-x(In2Te3)x films grown by close-spaced vapor transport combined with free evaporation

被引：0
|
作者：
M. Zapata-Torres
Y. P. Mascarenhas
M. A. Santana-Aranda
J. Luyo-Alvarado
M. Melé-Lirandez
A. Zapata-Navarro
S. Jimé-Sandovalnez
R. Castro-Rodriguez
J. L. Peña
机构：
[1] Instituto de Fisica de São Carlos-Universidade de São Paulo,Departamento de Fisica
[2] Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada del Instituto Politécnico Nacional,Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional
[3] Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional,Departamento de Fisica Aplicada, Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional
[4] Unidad Querétaro,Departamento de Fisica AplÞcada, Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional
[5] Unidad Mérida,undefined
[6] Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada del Instituto Politécnico Nacional,undefined
[7] Unidad Mérida,undefined
来源：
Journal of Materials Research | 2000年 / 15卷
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摘要：
The structural and electronic properties of (CdTe)1−x(In2Te3)x thin films as a function of substrate temperature were studied using x-ray diffraction, energy dispersive x-ray analysis, and Raman, transmission, and modulated transmission spectroscopies. The films were grown by the close-spaced vapor transport technique combined with free evaporation; CdTe and In2Te3 were used as sources. From x-ray diffraction the presence of mixed phases and differences in composition were detected, and good correlation with Raman spectroscopy was found. Transmission spectroscopy suggested the possibility of a modulation of the band gap of the alloy from a value as low as 0.5 eV up to 1.5 eV. Single-phase films presented a direct band gap of around 1.15 eV, as obtained from modulated transmission measurements.
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页码：1811 / 1815
页数：4
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