Molecular Beam Epitaxy of Strained Nanoheterostructures Based on Si, Ge, and Sn

被引：0
|
作者：
A. S. Deryabin
A. E. Dolbak
M. Yu. Esin
V. I. Mashanov
A. I. Nikiforov
O. P. Pchelyakov
L. V. Sokolov
V. A. Timofeev
机构：
[1] Rzhanov Institute of Semiconductor Physics,
[2] Siberian Branch,undefined
[3] Russian Academy of Sciences,undefined
来源：
Optoelectronics, Instrumentation and Data Processing | 2020年 / 56卷
关键词：
heterostructures; Si; Ge; Sn; molecular beam epitaxy; diffusion; dislocations;
D O I：
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学科分类号：
摘要：
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页码：470 / 477
页数：7
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