Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

被引：13

作者：

Mashanov, Vladimir ^{[1
]}

Ulyanov, Vladimir ^{[1
]}

Timofeev, Vyacheslav ^{[1
]}

Nikiforov, Aleksandr ^{[1
]}

Pchelyakov, Oleg ^{[1
]}

Yu, Ing-Song ^{[2
,3
]}

Cheng, Henry ^{[2
,3
]}

机构：

[1] AV Rzhanov Inst Semicond Phys SB RAS, Novosibirsk 630090, Russia

[2] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

基金：

俄罗斯基础研究基金会;

关键词：

Atomic Force Microscopy; Molecular Beam Epitaxy; Scanning Tunnel Microscopy; High Energy Electron; Atomic Step;

D O I：

10.1186/1556-276X-6-85

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The surface morphology of Ge0.96Sn0.04/Si(100) heterostructures grown at temperatures from 250 to 450 degrees C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) ex situ has been studied. The statistical data for the density of Ge0.96Sn0.04 nanodots (ND) depending on their lateral size have been obtained. Maximum density of ND (6 x 10(11) cm(-2)) with the average lateral size of 7 nm can be obtained at 250 degrees C. Relying on the reflection of high energy electron diffraction, AFM, and STM, it is concluded that molecular beam growth of Ge1-xSnx heterostructures with the small concentrations of Sn in the range of substrate temperatures from 250 to 450 degrees C follows the Stranski-Krastanow mechanism. Based on the technique of recording diffractometry of high energy electrons during the process of epitaxy, the wetting layer thickness of Ge0.96Sn0.04 films is found to depend on the temperature of the substrate.

引用

页码：1 / 5

页数：5

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