Infrared femtosecond laser-induced great enhancement of ultraviolet luminescence of ZnO two-dimensional nanostructures

被引：0
|
作者：
Jia Pan
Tianqing Jia
Xin Jia
Donghai Feng
Shian Zhang
Zhenrong Sun
Jianrong Qiu
机构：
[1] East China Normal University,State Key Laboratory of Precision Spectroscopy
[2] South China University of Technology,State Key Laboratory of Luminescent Materials and Devices
来源：
Applied Physics A | 2014年 / 117卷
关键词：
Defect State; Conduction Band Electron; Optical Parametric Amplifier; Plain Surface; Black Silicon;
D O I：
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中图分类号：
学科分类号：
摘要：
Two-dimensional (2D) complex nanostructures on the surface of ZnO crystal are fabricated by the interference of three 800 nm fs laser beams. The 2D nanostructures exhibit a great enhancement of UV emission excited by infrared fs laser with central wavelengths ranging from 1,200 nm to 2,000 nm. We propose that the defect states in the band gap of 2D nanostructures induced by 800 nm fs laser ablation cause the great enhancement of UV emission. We make theoretical calculations and explain well with the experimental results.
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页码：1923 / 1932
页数：9
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