Performance optimization of solar cells using non-polar, semi-polar and polar InGaN/GaN multiple quantum wells alongside AlGaN blocking layers

This paper reports opto-electronic properties and photo-voltaic performances of non-polar, semi-polar and polar solar cells employing InGaN/GaN multiple quantum wells (MQWs) with and without using AlGaN material as electron and hole blocking layers. In addition, the investigation is conducted for a number of QWs, e. g., 3, 5, 7, and 10. The performance of such devices is evaluated in terms of current density–voltage characteristics, power–voltage characteristics, fill factor, and power conversion efficiency. Our TCAD simulation results show that the InGaN/GaN solar cell featuring non-polar crystal structure, seven QWs alongside AlGaN blocking layers turns out to be the optimised device exhibiting open circuit voltage (Voc) of 1.08 V, short circuit current density (Jsc) of − 7.64 mA/cm2 and power conversion efficiency (η) of 5.36% among all other solar cells. The optimized device exhibits a considerably high value of η compared to earlier findings of nitride based solar cells. Hence our present design for InGaN/GaN MQW solar cells could provide an encouraging guideline for design and development of solar cells utilizing III–V nitride semiconductors in near future.