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- [5] Quasi-vacancy model for impurity centers with partially filled d- and f-shells TENTH FEOFILOV SYMPOSIUM ON SPECTROSCOPY OF CRYSTALS ACTIVATED BY RARE-EARTH AND TRANSITIONAL-METAL IONS, 1996, 2706 : 226 - 234
- [6] Anomalous diffusion of phosphorus in silicon by pair diffusion model and decrease in quasi-vacancy formation energy ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1595 - 1599
- [7] Impurity diffusion in silicon based on the pair diffusion model and decrease in quasi-vacancy formation energy .1. Phosphorus JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (11): : 5891 - 5903
- [8] DECREASE IN QUASI-VACANCY FORMATION ENERGY IN THE STUDY OF PAIR DIFFUSION-MODEL OF GROUP-V IMPURITIES IN SILICON JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12A): : 5523 - 5524
- [9] Impurity diffusion in silicon based on the pair diffusion model and decrease in quasi-vacancy formation energy .2. Arsenic JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (1A): : 44 - 55