Multicomponent Electron–Hole Liquid in Si/SiGe Quantum Wells

被引：0
|
作者：
A. A. Vasil’chenko
机构：
[1] Kuban State University,
来源：
JETP Letters | 2018年 / 108卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The density functional theory is used to calculate the energy of an electron–hole liquid in Si/Si1–xGex/Si quantum wells. Three one-dimensional nonlinear Schrödinger equations for electrons and light and heavy holes are solved numerically. It is shown that, in shallow quantum wells (small x), both light and heavy holes exist in the electron–hole liquid. Upon an increase in the Ge content, a transition to a state with one type of holes occurs, with the equilibrium density of electron–hole pairs decreasing by more than a factor of 2.
引用
下载
收藏
页码：185 / 188
页数：3
相关论文
共 50 条
  • [41] SI/SIGE QUANTUM-WELLS - FUNDAMENTALS TO TECHNOLOGY
    ISMAIL, K
    MEYERSON, BS
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1995, 6 (05) : 306 - 310
  • [42] Mechanism of terahertz lasing in SiGe/Si quantum wells
    Blom, A
    Odnoblyudov, MA
    Cheng, HH
    Yassievich, IN
    Chao, KA
    APPLIED PHYSICS LETTERS, 2001, 79 (06) : 713 - 715
  • [43] Erratum to: Plasma Excitations in SiGe/Si Quantum Wells
    A. R. Khisameeva
    A. V. Shchepetilnikov
    G. A. Nikolaev
    S. A. Lopatina
    Ya. V. Fedotova
    I. V. Kukushkin
    JETP Letters, 2023, 118 : 230 - 230
  • [44] Spin coherence and manipulation in Si/SiGe quantum wells
    Jantsch, W
    Wilamowski, Z
    FRONTIERS OF MULTIFUNCTIONAL INTEGRATED NANOSYSTEMS, 2004, 152 : 379 - 390
  • [45] Electron-hole liquid and excitonic molecules in quasi-two-dimensional SiGe layers of Si/SiGe/Si heterostructures
    Burbaev, T. M.
    Gordeev, M. N.
    Lobanov, D. N.
    Novikov, A. V.
    Rzaev, M. M.
    Sibeldin, N. N.
    Skorikov, M. L.
    Tsvetkov, V. A.
    Shepel, D. V.
    JETP LETTERS, 2010, 92 (05) : 305 - 309
  • [46] Electron-hole liquid and excitonic molecules in quasi-two-dimensional SiGe layers of Si/SiGe/Si heterostructures
    T. M. Burbaev
    M. N. Gordeev
    D. N. Lobanov
    A. V. Novikov
    M. M. Rzaev
    N. N. Sibeldin
    M. L. Skorikov
    V. A. Tsvetkov
    D. V. Shepel
    JETP Letters, 2010, 92 : 305 - 309
  • [47] Emission Spectrum and Stability of Two Types of Electron-Hole Liquid in Shallow Si/Si1- xGexSi Quantum Wells
    Vasilchenko, A. A.
    Krivobok, V. S.
    Nikolaev, S. N.
    Bagaev, V. S.
    Onishchenko, E. E.
    Kopytov, G. F.
    PHYSICS OF THE SOLID STATE, 2020, 62 (04) : 603 - 610
  • [48] Dipolar electron-hole liquid in a double-well SiGe/Si heterosystem
    Akmaev, M. A.
    Burbaev, T. M.
    18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, 2017, 816
  • [49] Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures
    Evans, P. G.
    Savage, D. E.
    Prance, J. R.
    Simmons, C. B.
    Lagally, M. G.
    Coppersmith, S. N.
    Eriksson, M. A.
    Schuelli, T. U.
    ADVANCED MATERIALS, 2012, 24 (38) : 5217 - 5221
  • [50] Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells
    Jiang, Zhengping
    Kharche, Neerav
    Boykin, Timothy
    Klimeck, Gerhard
    APPLIED PHYSICS LETTERS, 2012, 100 (10)
12345