Atomic scale epitaxial growth of BaTiO3 thin films by laser molecular beam epitaxy

被引：0
|
作者：
Huisheng Wang
Kun Ma
Yanwei Liu
Zhiqiang Peng
Dafu Cui
Huibin Lu
Yueliang Zhou
Zhenghao Chen
Lin Li
Guozhen Yang
机构：
[1] Chinese Academy of Sciences,Laboratory
[2] Chinese Academy of Sciences,of Optical Physics, Institute of Physics and Center for Condensed Matter Physics
来源：
Science in China Series A: Mathematics | 1997年 / 40卷
关键词：
laser molecular beam epitaxy; BaTiO; thin films; structural analysis; ferraelectric properties;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
By using laser molecular beam epitaxy (L-MBE), atomic scale epitaxid growth of BaTiO3(BTO) thin films on SrTiO3 (STO) substrates is achieved. Measurements of reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy, and transmission electron microscopy reveal that the BTO films arec-axis oriented single crystals with smooth surface. The multi-layer ferroelectric/superconducting heterostructures are also prepared and the ferroelectric properties of BTO films are studied. The results show that by using L-MBE technique, high quality BTO films and improved device performance can be obtained.
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页码：522 / 527
页数：5
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