Atomic scale epitaxial growth of BaTiO3 thin films by laser molecular beam epitaxy

被引：1

作者：

Wang, HS ^{[1
]}

Ma, K ^{[1
]}

Liu, YW ^{[1
]}

Peng, ZQ ^{[1
]}

Cui, DF ^{[1
]}

Lu, HB ^{[1
]}

Zhou, YL ^{[1
]}

Chen, ZH ^{[1
]}

Li, L ^{[1
]}

Yang, GZ ^{[1
]}

机构：

[1] CHINESE ACAD SCI,CTR CONDENSED MATTER PHYS,BEIJING 100080,PEOPLES R CHINA

来源：

SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY | 1997年 / 40卷 / 05期

关键词：

laser molecular beam epitaxy; BaTiO3 thin films; structural analysis; ferroelectric properties;

D O I：

10.1007/BF02896960

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

By using laser molecular beam epitaxy (L-MBE), atomic scale epitaxial growth of BaTiO3(BTO) thin films on SrTiO3(STO) substrates is achieved. Measurements of reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy, and transmission electron microscopy reveal that the BTO films are c-axis oriented single crystals with smooth surface. The multi-layer ferroelectric/superconducting heterostructures are also prepared and the ferroelectric properties of BTO films are studied. The results show that by using L-MBE technique, high quality BTO films and improved device performance can be obtained.

引用

页码：522 / 527

页数：6

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