CMOS integrated delay chain for X-Ku band applications

被引:0
|
作者
Mohammad Hossein Ghazizadeh
Fateme Daryabari
Ali Medi
机构
[1] Sharif University of Technology,Department of Electrical Engineering
关键词
All pass network (APN); CMOS; Delay chain circuit;
D O I
暂无
中图分类号
学科分类号
摘要
A wideband integrated delay chain chip with 5-bit delay control, maximum delay of 120 ps and 3.9 ps delay resolution, designed and fabricated in 0.18 μm\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\upmu \hbox {m}$$\end{document} CMOS technology is presented. Second-order all pass networks (APN) are used as delay structures in this delay circuit. In the design of the two MSB bits of the fabricated chip, a new design approach is used which allows higher group delay to be achieved with fewer number of passive second-order APN circuits. This would in turn reduce insertion loss of the designed delay control chain. Measurement results of the fabricated delay chain show 12.6–20.5 dB insertion loss and less than 3.3 ps RMS delay error over the intended frequency band from 8 to 18 GHz. The fabricated chip occupies an area of 1.2×2.7\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$1.2\times 2.7$$\end{document} mm2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$^{2}$$\end{document} and has no DC power consumption.
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页码:213 / 224
页数:11
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