Properties of half-Heusler compounds TaIrGe by using first-principles calculations

被引:0
|
作者
JunHong Wei
Guangtao Wang
机构
[1] Henan Normal University,College of Physics and Information Engineering
[2] Henan Institute of Science and Technology,School of Mechanical and Electrical Engineering
来源
Applied Physics A | 2017年 / 123卷
关键词
Power Factor; Thermoelectric Property; Seebeck Coefficient; Thermoelectric Material; Valence Band Maximum;
D O I
暂无
中图分类号
学科分类号
摘要
The electronic structures, optical and thermoelectric properties of ternary half-Heusler compound TaIrGe were investigated by using the first-principles and Boltzmann transport theory. Spin-orbit coupling (SOC) removed the degeneracy of VBM, and then decreased the Seebeck coefficients and power factor. From the compressive to tensile strain, the band gap gradually increases from 0.96 to 1.11 eV, accompanied by the absorption coefficient peak red-shift. The effective mass (mDOS∗\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$m^{*}_\mathrm{DOS}$$\end{document}) of VBM and CBM gradually increases from the compressive to tensile strain, which enhances the Seebeck coefficient and power factor. Our results indicate that the electronic structures, optical and thermoelectric properties of TaIrGe can be effectively tuned by the strain and TaIrGe can be used as an important photoelectric and thermoelectric material in the future.
引用
收藏
相关论文
共 50 条
  • [41] Estimation of some physical properties of new RuCrSb half-Heusler compound using first-principles formalism
    Kalita, Dipangkar
    Saxena, Atul
    BULLETIN OF MATERIALS SCIENCE, 2024, 47 (02)
  • [42] A first-principles approach to half-Heusler thermoelectrics: Accelerated prediction and understanding of material properties
    Page, Alexander
    Poudeu, P. F. P.
    Uher, Ctirad
    JOURNAL OF MATERIOMICS, 2016, 2 (02) : 104 - 113
  • [43] Electronic, Elastic, and Thermoelectric Properties of Half-Heusler Topological Semi-Metal HfIrAs from First-Principles Calculations
    Bamgbose, Muyiwa Kehinde
    Ayedun, Funmilayo
    Solola, Gbenro Timothy
    Musari, Abolore Adebayo
    Kenmoe, Stephane
    Adebayo, Gboyega Augustine
    CRYSTALS, 2023, 13 (01)
  • [44] First-principles calculations of structural, elastic, electronic, magnetic, optical, thermoelectric, and dynamic properties of CoCrTe half-Heusler compound
    Mohammad, Noorhan F. AlShaikh
    Abu-Jafar, Mohammed S.
    Asad, Jihad H.
    Bouhemadou, A.
    Mousa, Ahmad A.
    Khenata, R.
    Chik, Abdullah
    OPTICAL AND QUANTUM ELECTRONICS, 2024, 56 (06)
  • [45] First-principles calculations to investigate mechanical, optoelectronic and thermoelectric properties of half-Heusler p-type semiconductor BaAgP
    Parvin, F.
    Hossain, M. A.
    Ahmed, I
    Akter, K.
    Islam, A. K. M. A.
    RESULTS IN PHYSICS, 2021, 23
  • [46] Thermal Expansion of Ni-Ti-Sn Heusler and Half-Heusler Materials from First-Principles Calculations and Experiments
    Hermet, P.
    Ayral, R. M.
    Theron, E.
    Yot, P. G.
    Salles, F.
    Tillard, M.
    Jund, P.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (39): : 22405 - 22411
  • [47] Investigations of electronic and thermoelectric properties of half-Heusler alloys XMgN (X = Li, Na, K) by first-principles calculations
    Ahmed, Rashid
    Masuri, Nor Safikah
    Haq, Bakhtiar Ul
    Shaari, A.
    AlFaifi, S.
    Butt, Faheem K.
    Muhamad, Mohamed Noor
    Ahmed, M.
    Tahir, Sohail Afzal
    MATERIALS & DESIGN, 2017, 136 : 196 - 203
  • [48] Structural, electronic, mechanical and phonon properties of half-Heusler GaNiSb, InNiSb and InPdSb alloys via first-principles calculations
    John, Rita
    Rajendran, Anubama
    COMPUTATIONAL CONDENSED MATTER, 2023, 35
  • [49] Electronic structure and thermoelectric properties of half-Heusler Zr0.5Hf0.5NiSn by first-principles calculations
    Zou, D. F.
    Xie, S. H.
    Liu, Y. Y.
    Lin, J. G.
    Li, J. Y.
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (19)
  • [50] First-principles insights into thermoelectric behavior of XNiAs (X = Sc, Y) half-Heusler compounds
    Giri, Ashesh
    Khatri, Prakash
    Neupane, Hari Krishna
    Adhikari, Narayan Prasad
    MATERIALS RESEARCH EXPRESS, 2024, 11 (11)