Optical and magnetic properties of the La0.7RE0.1Ca0.2CrO3 (RE = Nd, Sm and Eu) orthochromite for optoelectronic and magnetic applications

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作者
Fatima Zohra Bouasla
Nabil Mahamdioua
Jose A. Alonso
Jose L. Martinez
Faiza Meriche
Cabir Terzioglu
Sevgi Polat Altintas
机构
[1] University of Jijel,Non
[2] Instituto de Ciencia de Materiales de Madrid,Destrutive Testing Laboratory, Faculty of Science and Technology
[3] CSIC,LEM Laboratory, Department of Physics
[4] Cantoblanco,Department of Physics, Faculty of Arts and Sciences
[5] University of Jijel,undefined
[6] Bolu Abant Izzet Baysal University,undefined
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The orthochromites La0.7RE0.1Ca0.2CrO3 (RE = Nd\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$Nd$$\end{document},Sm\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$Sm$$\end{document}, and Eu\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$Eu$$\end{document}) were prepared by solid-state reaction and the structural, microstructural, optical, and magnetic properties were investigated. The XRD revealed an orthorhombic perovskite structure. The UV–visible revealed the bandgap energy values: 2.81, 2.98, and 3.12 eV for Nd\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$Nd$$\end{document}, Sm\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$Sm$$\end{document}, and Eu\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$Eu$$\end{document} doped samples, respectively. It is explained by the creation of the localized state. The refractive index, Urbach energy, and optical conductivity were investigated. The magnetization investigation revealed that the Néel temperature decreases with decreasing substituting ionic radius. Below TN, all samples exhibit weak ferromagnetic behavior due to the t-e hybridization caused by intrinsic distortions. The Nd\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$Nd$$\end{document} and Sm\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$Sm$$\end{document} doped samples show spin reorientation due to the exchange interaction between the Sm3+/Nd3+ and Cr3+. The negative magnetization of the Nd\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$Nd$$\end{document}-doped sample indicates its possible use as a volatile memory device. Regarding the Eg\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${E}_{g}$$\end{document} values, our samples could be suitable candidates for optoelectronic devices.
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