Numerical simulations of propagation of SCWs in strained Si/SiGe heterostructures at 4.2 and 77 K

被引：0

作者：

Abel Garcia-B.

Volodymyr Grimalsky

Edmundo A. Gutierrez-D.

机构：

[1] INAOE,Electronics Department

[2] INTEL-SRCM,undefined

来源：

Journal of Computational Electronics | 2007年 / 6卷

关键词：

Space charge waves; Strained Si/SiGe heterostructure; Negative differential conductance;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The negative differential conductance phenomenon that occurs in strained Si/SiGe hetrostructures at low temperatures, have been used to perform numerical simulations of the propagation and amplification of space charge waves (SCWs). The 2D numerical simulations indicate that amplification of SCWs on the surface of the heterostructure may occur up to frequencies of 40 GHz when cooled down to 77 K, and up to 44 GHz at 4.2 K.

引用

页码：137 / 140

页数：3

共 50 条

[41] Piezoelectric effect in coherently strained B-doped (001)SiGe/Si heterostructures
Khizhny, V.I.
Mironov, O.A.
Makarovskii, O.A.
Braithwaite, G.
Mattey, N.L.
Parker, E.H.C.
Phillips, P.J.
Acta Physica Polonica A, 1995, 88 (4 pt 1):
[42] PIEZOELECTRIC EFFECT IN COHERENTLY STRAINED B-DOPED (001)SIGE/SI HETEROSTRUCTURES
KHIZHNY, VI
MIRONOV, OA
MAKAROVSKII, OA
BRAITHWAITE, G
MATTEY, NL
PARKER, EHC
PHILLIPS, PJ
ACTA PHYSICA POLONICA A, 1995, 88 (04) : 779 - 782
[43] HIGH-FIELD TRANSPORT OF HOT-ELECTRONS IN STRAINED SI/SIGE HETEROSTRUCTURES
MIYATSUJI, K
UEDA, D
MASAKI, K
YAMAKAWA, S
HAMAGUCHI, C
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 772 - 774
[44] MONTE-CARLO SIMULATIONS OF GE SEGREGATION IN STRAINED SI AND SIGE ALLOYS
LARSSON, MI
HANSSON, GV
SURFACE SCIENCE, 1993, 291 (1-2) : 117 - 128
[45] Solid phase recrystallization and strain relaxation in ion-implanted strained si on SiGe heterostructures
Phen, MS
Crosby, RT
Craciun, V
Jones, KS
Law, ME
Hansen, JL
Larsen, AN
Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices, 2005, 864 : 369 - 375
[46] Generation of misfit dislocations and stacking faults in supercritical thickness strained-Si/SiGe heterostructures
Kimura, Y
Sugii, N
Kimura, S
Inui, K
Hirasawa, W
APPLIED PHYSICS LETTERS, 2006, 88 (03) : 1 - 3
[47] Mobility enhancement in strained ge heterostructures by planarization of SiGe buffer layers grown on Si substrates
Sawano, K
Abe, Y
Satoh, H
Nakagawa, K
Shiraki, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (42-45): : L1320 - L1322
[48] Misfit dislocation nucleation and multiplication in fully strained SiGe/Si heterostructures under thermal annealing
Rzaev, M
Schäffler, F
Vdovin, V
Yugova, T
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2005, 8 (1-3) : 137 - 141
[49] Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell
Yaguchi, H
Yamamoto, T
Shiraki, Y
THIN SOLID FILMS, 1998, 321 : 241 - 244
[50] Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
Neul, Malte
Sprave, Isabelle, V
Diebel, Laura K.
Zinkl, Lukas G.
Fuchs, Florian
Yamamoto, Yuji
Vedder, Christian
Bougeard, Dominique
Schreiber, Lars R.
PHYSICAL REVIEW MATERIALS, 2024, 8 (04):

← 1 2 3 4 5 →