Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

被引：0
|
作者：
V. G. Tikhomirov
V. E. Zemlyakov
V. V. Volkov
Ya. M. Parnes
V. N. Vyuginov
W. V. Lundin
A. V. Sakharov
E. E. Zavarin
A. F. Tsatsulnikov
N. A. Cherkashin
M. N. Mizerov
V. M. Ustinov
机构：
[1] Saint Petersburg Electrotechnical University “LETI”,Submicron Heterostructures for Microelectronics Research and Engineering Center
[2] Joint Stock Company “Svetlana-Electronpribor”,Ioffe Physical–Technical Institute
[3] National Research University of Electronic Technology (MIET),undefined
[4] Russian Academy of Sciences,undefined
[5] Russian Academy of Sciences,undefined
[6] CEMES-CNRS-Université de Toulouse,undefined
来源：
Semiconductors | 2016年 / 50卷
关键词：
Sapphire Substrate; Joint Stock Company; Specific Output Power; AlGaN Barrier Layer; Microwave Transistor;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.
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页码：244 / 248
页数：4
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