Drain leakage and hot carrier reliability characteristics of asymmetric source-drain MOSFET

被引：0
|
作者：
Kwangsoo Kim
Byoungseon Choi
Dohyun Baek
Hyungwook Kim
Byoundeog Choi
机构：
[1] Sungkyunkwan University,College of Information and Communication Engineering
来源：
Journal of the Korean Physical Society | 2013年 / 63卷
关键词：
Drain engineering; Band-to-band tunneling; Asymmetric source-drain MOSFET; Gate-induced drain leakage (GIDL);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The asymmetric source-drain metal-oxide-semiconductor field-effect transistor (MOSFET) was characterized in detail in comparison with the conventional symmetric source-drain MOSFET. The principal difference between asymmetric and symmetric source-drain MOSFETs is the drain-side structure. The asymmetric source-drain MOSFET has a lightly-doped drain for a low electric field. As a result, the gate-induced drain leakage (GIDL) current is reduced, and the hot carrier reliability is improved.
引用
收藏
页码：1023 / 1027
页数：4
相关论文
共 50 条
  • [21] Si nanowire p-FET with asymmetric source-drain I-V characteristics
    Lee, Sang-Kwon
    Lee, Seung-Yong
    Rogdakis, Konstantinos
    Jang, Chan-Oh
    Kim, Dong-Joo
    Bano, Edwige
    Zekentes, Konstantinos
    SOLID STATE COMMUNICATIONS, 2009, 149 (11-12) : 461 - 463
  • [22] BSIM4 gate leakage model including source-drain partition
    Cao, KM
    Lee, WC
    Liu, W
    Jin, X
    Su, P
    Fung, SKH
    An, JX
    Yu, B
    Hu, C
    INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 815 - 818
  • [23] A dynamic source-drain extension (DSDE) MOSFET using a separately biased conductive spacer
    Gonzalez, F
    Mathew, SJ
    Chediak, JA
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 645 - 648
  • [24] Noise Mechanism of Drain Avalanche Hot Carrier Stress in Scaled MOSFET
    Liu Yu-An
    Yan, Cao Chun
    THIRD INTERNATIONAL SYMPOSIUM ON ELECTRONIC COMMERCE AND SECURITY WORKSHOPS (ISECS 2010), 2010, : 256 - 259
  • [25] Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET
    Wang, TH
    Hsu, CF
    Chiang, LP
    Zous, NK
    Chao, TS
    Chang, CY
    1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, : 209 - 213
  • [26] GENERALIZED-METHOD FOR EXTRACTION OF MOSFET SOURCE-DRAIN SERIES RESISTANCE AGAINST TEMPERATURE
    EMRANI, A
    GHIBAUDO, G
    BALESTRA, F
    ELECTRONICS LETTERS, 1993, 29 (09) : 786 - 788
  • [27] SUBBREAKDOWN DRAIN LEAKAGE CURRENT IN MOSFET.
    Chen, J.
    Chan, T.Y.
    Chen, I.C.
    Ko, P.K.
    Hu, Chenming
    Electron device letters, 1987, EDL-8 (11): : 515 - 517
  • [28] EFFECTS OF THE GATE-TO-DRAIN SOURCE OVERLAP ON MOSFET CHARACTERISTICS
    CHAN, TY
    WU, AT
    KO, PK
    HU, CM
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 326 - 328
  • [29] Off-state leakage in MOSFET considering source/drain extension regions
    Hur, Jae
    Jeong, Woo Jin
    Shin, Mincheol
    Choi, Yang-Kyu
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (08)
  • [30] Analysis of a novel elevated source drain MOSFET with-induced gate-induced drain-leakage current
    Kim, KW
    Choi, CS
    Choi, WY
    2000 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 2000, : 36 - 39
12345