Drain leakage and hot carrier reliability characteristics of asymmetric source-drain MOSFET

被引：0
|
作者：
Kwangsoo Kim
Byoungseon Choi
Dohyun Baek
Hyungwook Kim
Byoundeog Choi
机构：
[1] Sungkyunkwan University,College of Information and Communication Engineering
来源：
Journal of the Korean Physical Society | 2013年 / 63卷
关键词：
Drain engineering; Band-to-band tunneling; Asymmetric source-drain MOSFET; Gate-induced drain leakage (GIDL);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The asymmetric source-drain metal-oxide-semiconductor field-effect transistor (MOSFET) was characterized in detail in comparison with the conventional symmetric source-drain MOSFET. The principal difference between asymmetric and symmetric source-drain MOSFETs is the drain-side structure. The asymmetric source-drain MOSFET has a lightly-doped drain for a low electric field. As a result, the gate-induced drain leakage (GIDL) current is reduced, and the hot carrier reliability is improved.
引用
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页码：1023 / 1027
页数：4
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