Electrical Properties of ZnSe Epilayers on GaAs(001)

被引：0
|
作者：
Yu. G. Sadof'ev
V. G. Litvinov
机构：
[1] Russian Academy of Sciences,Lebedev Institute of Physics
[2] Ryazan State Radio Engineering Academy,undefined
来源：
Inorganic Materials | 2000年 / 36卷
关键词：
Growth Rate; Inorganic Chemistry; GaAs; Electrical Property; Energy Spectrum;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The electrical properties (conductivity, mobility and concentration of majority carriers, and energy spectrum of deep-level defects) of ZnSe layers grown on GaAs(001) by molecular-beam epitaxy were investigated. The results were used to assess the effects of growth rate, ZnSe surface reconstruction, and Ga indiffusion from the substrate on the parameters of the epilayers.
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页码：1203 / 1207
页数：4
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