Reliability of the Properties of (Pb,La)(Zr,Ti)O3 Capacitors with Non—noble Metal Oxide Electrodes stored in an H2 Atmosphere

被引：0
|
作者：
Yoko Takada
Naoki Okamoto
Takeyasu Saito
Kazuo Kondo
Takeshi Yoshimura
Norifumi Fujimura
Koji Higuchi
Akira Kitajima
Rie Shishido
机构：
[1] Prefecture University,Department of Chemical Engineering, Osaka
[2] Osaka Prefecture University,Department of Physics and Electronics
[3] Osaka University,The Institute of Scientific and Industrial Research
[4] Tohoku University,Institute of Multidisciplinary Research for Advances, Materials
来源：
MRS Advances | 2016年 / 1卷 / 5期
关键词：
D O I：
10.1557/adv.2016.139
中图分类号：
学科分类号：
摘要：
We fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors with Sn:In2O3 (ITO) or Pt top electrodes and investigated the ferroelectric properties of these PLZT capacitors. The shape of polarization–voltage hysteresis loops was essentially unchanged and the decrease in the remnant polarization of the ITO/PLZT/Pt capacitors was smaller than that of the Pt/PLZT/Pt capacitors after annealing with 3% D2 (in N2) at 200°C and 1 Torr (i.e., FGAD). Time of flight secondary mass spectrometry revealed that the D atoms were incorporated into the PLZT film of the Pt/PLZT/Pt capacitors after 3% D2 annealing, resulting in a decrease in the ferroelectric properties. In comparison, no D ion signal was detected in the PLZT film after FGAD for ITO/PLZT/Pt capacitors.
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页码：369 / 374
页数：5
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