Propagation of electric fields induced by optical phonons in semiconductor heterostructures

被引：0
|
作者：
I. D. Rukhlenko
A. V. Fedorov
机构：
[1] All-Russia Research Center Vavilov State Optical Institute,
来源：
Optics and Spectroscopy | 2006年 / 100卷
关键词：
42.70;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The penetration of electric fields accompanying long-wavelength optical phonos from one region of a semiconductor heterostructure to another is investigated. It is proposed to determine the penetration depth of such fields from the relaxation caused by these fields in quantum dots. By the example of a cylindrical Ge quantum dot embedded in a GaP/GaAs heterostructure, it is shown that the electric fields induced by longitudinal optical phonons can penetrate through the interface between semiconductors at distances of about 100 nm.
引用
收藏
页码：238 / 244
页数：6
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