Voltage dependence of the differential capacitance of a p+-n junction

The dependences of the differential capacitance and current of a p+-n junction with a uniformly doped n region on the voltage in the junction region are calculated. The p+-n junction capacitance controls the charge change in the junction region taking into account a change in the electric field of the quasi-neutral n region and a change in its bipolar drift mobility with increasing excess charge-carrier concentration. It is shown that the change in the sign of the p+-n junction capacitance with increasing injection level is caused by a decrease in the bipolar drift mobility as the electron-hole pair concentration in the n region increases. It is shown that the p+-n junction capacitance decreases with increasing reverse voltage and tends to a constant positive value.