Carrier Trapping and Scattering in Ge-Doped SiO2

被引：0
|
作者：
Brinkevich D.I. [1 ]
Prosolovich V.S. [1 ]
Yankovskii Yu.N. [1 ]
机构：
[1] Belarussian State University, Minsk
来源：
Russian Microelectronics | 2002年 / 31卷 / 4期
关键词：
Oxide; SiO2; Free Path; Strong Electric Field; Effective Electron;
D O I：
10.1023/A:1016343315052
中图分类号：
学科分类号：
摘要：
Ge-doped SiO2 films on Si are examined by methods of photoinjection and capacitance-voltage characteristics. It is demonstrated that the effective electron free path is decreased in Ge-doped oxides. The doping is also shown to increase the breakdown field of the oxide by 10-15%. It is concluded that Ge doping reduces the degradation of SiO2 in strong electric fields.
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页码：254 / 256
页数：2
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