Carrier Trapping and Scattering in Ge-Doped SiO2

被引：0

作者：

Brinkevich D.I. ^{[1
]}

Prosolovich V.S. ^{[1
]}

Yankovskii Yu.N. ^{[1
]}

机构：

[1] Belarussian State University, Minsk

来源：

Russian Microelectronics | 2002年 / 31卷 / 4期

关键词：

Oxide; SiO2; Free Path; Strong Electric Field; Effective Electron;

D O I：

10.1023/A:1016343315052

中图分类号：

学科分类号：

摘要：

Ge-doped SiO2 films on Si are examined by methods of photoinjection and capacitance-voltage characteristics. It is demonstrated that the effective electron free path is decreased in Ge-doped oxides. The doping is also shown to increase the breakdown field of the oxide by 10-15%. It is concluded that Ge doping reduces the degradation of SiO2 in strong electric fields.

引用

页码：254 / 256

页数：2

共 50 条

[1] Mechanism of electron trapping in Ge-doped SiO2 glass
Uchino, T
Takahashi, M
Yoko, T
APPLIED PHYSICS LETTERS, 2001, 79 (03) : 359 - 361
[2] E′ center in ge-doped SiO2 glass
Tamura, T
Lu, GH
Kohyama, M
Yamamoto, R
PHYSICAL REVIEW B, 2004, 70 (15) : 153201 - 1
[3] Effect of annealing on Ge-doped SiO2 thin films
Fujimaki, M
Shimoto, S
Miyazaki, N
Ohki, Y
Seol, KS
Imamura, K
JOURNAL OF APPLIED PHYSICS, 1999, 86 (09) : 5270 - 5273
[4] IMPURITY DIFFUSION INTO SI USING GE-DOPED SIO2 FILM
ABE, T
SATO, K
KONAKA, M
MIYAZAKI, A
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (08) : C300 - &
[5] Gamma irradiated thermoluminescence response of Ge-doped SiO2 fibre
Wahib, Norfadira
Zulkepely, Nurul Najua
Nawi, Siti Nurasiah Mat
Amin, Yusoff Mohd
Ling, Yap Seong
Sani, Siti Fairus Abdul
Maah, Mohd Jamil
Bradley, D. A.
APPLIED RADIATION AND ISOTOPES, 2015, 105 : 158 - 162
[6] Electron beam poling in amorphous Ge-doped H:SiO2 films
Liu, Q.
Poumellec, B.
Zhao, X.
Girard, G.
Bouree, J. . E.
Kudlinski, A.
Martinelli, G.
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (2-9) : 472 - 475
[7] Paramagnetic centres induced in Ge-doped SiO2 glass with UV irradiation
Fujimaki, M
Katoh, T
Kasahara, T
Miyazaki, N
Ohki, Y
JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (12) : 2589 - 2594
[8] Excited-state absorption measurement in Ge-doped SiO2 glass
Fujimaki, M
Seol, KS
Ohki, Y
JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) : 2913 - 2915
[9] Energy states of Ge-doped SiO2 glass estimated through absorption and photoluminescence
J Appl Phys, 3 (1042):
[10] Ab initio formation energies of point defects in pure and Ge-doped SiO2
Pacchioni, G
Ierano, G
PHYSICAL REVIEW B, 1997, 56 (12): : 7304 - 7312

← 1 2 3 4 5 →