Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas

被引：0
|
作者：
D. I. Khusyainov
A. M. Buryakov
V. R. Bilyk
E. D. Mishina
D. S. Ponomarev
R. A. Khabibullin
A. E. Yachmenev
机构：
[1] Moscow Technological University (MIREA),Institute of Microwave Semiconductor Electronics
[2] Russian Academy of Sciences,undefined
来源：
Technical Physics Letters | 2017年 / 43卷
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摘要：
The effect of epitaxial stresses on the excess-carrier dynamics and the terahertz radiation spectrum of the InyGa1–yAs films have been investigated by optical pump-probe and terahertz time-domain spectroscopy. It has been demonstrated that a InyGa1–yAs film with a higher mechanical stress has the shorter excesscarrier lifetime and broader terahertz radiation spectrum.
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页码：1020 / 1022
页数：2
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