Epitaxial stresses in InGaAs photoconductive layer for THz antennas

被引：0

作者：

Khusyainov, D. I. ^{[1
]}

Buryakov, A. M. ^{[1
]}

Bilyk, V. R. ^{[1
]}

Mishina, E. D. ^{[1
]}

Ponomarev, D. S. ^{[2
]}

Khabibullin, R. A. ^{[2
]}

Yachmenev, A. E. ^{[2
]}

机构：

[1] Moscow Technol Univ MIREA, Lab Femtosecond Opt Nanotechnol, Moscow, Russia

[2] Russian Acad Sci, Inst Ultra High Frequency Semicond Elect, Moscow, Russia

来源：

2017 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP) | 2017年

基金：

俄罗斯基础研究基金会;

关键词：

InGaAs; epitaxial stress; THz;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Influence of the epitaxial stresses on dynamics of photoexcited carriers and THz time domain spectrum in InGaAs films was investigated by pump-probe transient reflectivity and THz time domain spectroscopy. The reduction of carrier lifetime and increase of THz generation bandwidth was observed for the higher strained InGaAs film. In paper it was shown that formation of the epitaxial stresses in InGaAs films is a method to enhance the intensity of THz radiation for THz emitter for near infrared region.

引用

页数：3

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