Measurement of the Energy Resolution of Silicon X-Ray Detectors Using Absorption Edge Spectra

被引：0
|
作者：
S. M. Osadchii
A. A. Petukhov
V. B. Dunin
机构：
[1] All-Russia Research Institute of Physicotechnical and Radio Measurements (VNIIFTRI),
[2] Joint Institute for Nuclear Research (JINR),undefined
来源：
Measurement Techniques | 2019年 / 62卷
关键词：
Si-pin-detector; detector energy resolution; x-rays; gamma-ray source;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A silicon detector with a longitudinal silicon wafer has been developed. x-Ray spectra at the K-absorption edges of Au, Pb, and Bi are used to measure its energy resolution. The results are compared with measurements based on x-rays from a 241Am gamma-ray source. The dependence of the energy resolution of the detector on the noise of a charge-sensitive amplifier and on statistical fluctuations in pair production of carriers in the silicon is calculated.
引用
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页码：465 / 469
页数：4
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