Comment on A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater. 37, 646 (2008)]

被引：0

作者：

V. Tilak

K. Matocha

机构：

[1] GE Global Research,Semiconductor Technology Laboratory

[2] One Research Circle,undefined

来源：

Journal of Electronic Materials | 2009年 / 38卷

关键词：

Silicon carbide; SiC; SiC/SiO; inversion layer; scattering mechanisms; channel mobility; bulk traps; Coulomb scattering;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Agarwal and Haney [J. Electron. Mater. 37, 646 (2008)] have recently suggested that bulk defects may limit the inversion-layer mobility in SiC metal oxide semiconductor field-effect transistors. However, we believe that the physics of charge trapping and Coulomb scattering by bulk traps quantitatively contradicts this model.

引用

页码：618 / 620

页数：2

共 3 条

[1] Comment on A. Agarwal and S. Haney, "Some Critical Materials and Processing Issues in SiC Power Devices" [J. Electron. Mater. 37, 646 (2008)]
Tilak, V.
Matocha, K.
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (04) : 618 - 620
[2] Response to the Comments by Tilak and Matocha on the Article by A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater., vol. 37, no. 5, pp. 646–654 (2008)]
A. Agarwal
S. Haney
[J]. Journal of Electronic Materials, 2009, 38 : 621 - 622
[3] Response to the Comments by Tilak and Matocha on the Article by A. Agarwal and S. Haney, "Some Critical Materials and Processing Issues in SiC Power Devices" [J. Electron. Mater., vol. 37, no. 5, pp. 646-654 (2008)]
Agarwal, A.
Haney, S.
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (04) : 621 - 622

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