Comment on A. Agarwal and S. Haney, "Some Critical Materials and Processing Issues in SiC Power Devices" [J. Electron. Mater. 37, 646 (2008)]

被引：1

作者：

Tilak, V. ^{[1
]}

Matocha, K. ^{[1
]}

机构：

[1] GE Global Res, Semicond Technol Lab, Niskayuna, NY USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2009年 / 38卷 / 04期

关键词：

INVERSION LAYER; MOBILITY; SILICON;

D O I：

10.1007/s11664-009-0661-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Agarwal and Haney [J. Electron. Mater. 37, 646 (2008)] have recently suggested that bulk defects may limit the inversion-layer mobility in SiC metal oxide semiconductor field-effect transistors. However, we believe that the physics of charge trapping and Coulomb scattering by bulk traps quantitatively contradicts this model.

引用

页码：618 / 620

页数：3

共 3 条

[1] Comment on A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater. 37, 646 (2008)]
V. Tilak
K. Matocha
[J]. Journal of Electronic Materials, 2009, 38 : 618 - 620
[2] Response to the Comments by Tilak and Matocha on the Article by A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater., vol. 37, no. 5, pp. 646–654 (2008)]
A. Agarwal
S. Haney
[J]. Journal of Electronic Materials, 2009, 38 : 621 - 622
[3] Response to the Comments by Tilak and Matocha on the Article by A. Agarwal and S. Haney, "Some Critical Materials and Processing Issues in SiC Power Devices" [J. Electron. Mater., vol. 37, no. 5, pp. 646-654 (2008)]
Agarwal, A.
Haney, S.
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (04) : 621 - 622

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