Synthesis of βGa2O3 nanowires by an MOCVD approach

被引：0

作者：

H.W. Kim

N.H. Kim

机构：

[1] Inha University,School of Materials Science and Engineering

来源：

Applied Physics A | 2005年 / 81卷

关键词：

Oxide; Oxygen; Thin Film; Operating Procedure; Electronic Material;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have synthesized monoclinic gallium oxide (βGa2O3) nanowires on Au-coated Si substrates by a reaction of a trimethylgallium and oxygen mixture. The βGa2O3 nanowires became progressively thinner from bottom to top, with diameters ranging from 10 to 200 nm and lengths of several micrometers. We found that Au-containing nanoparticles were attached to the tips of the βGa2O3 nanowires and thus the nanowire growth could be a vapor–liquid–solid process .

引用

页码：763 / 765

页数：2

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