Reverse I-V characteristics of a diode-connected heterostructure MESFET

被引：0
|
作者：
Burzin S.B. [1 ]
Starosel'Skii V.I. [1 ]
Shmelev S.S. [1 ]
机构：
[1] Moscow Institute of Electronic Technology (Technical University), Moscow
来源：
Russian Microelectronics | 2007年 / 36卷 / 06期
关键词：
85.40.-e;
D O I：
10.1134/S1063739707060091
中图分类号：
学科分类号：
摘要：
The reverse gate current of heterostructure MESFETs is studied experimentally. The behavior of the reverse I-V characteristic is shown to be consistent with the tunneling mechanism of the current. The curve is discussed with regard to two special features of a planar device configuration: the full depletion of the doped layer and the δ-shaped character of the doping profile. © 2007 Pleiades Publishing, Ltd.
引用
收藏
页码：415 / 421
页数：6
相关论文
共 50 条
  • [21] A novel resonant tunneling diode with single-peak I-V characteristics
    Arai, K
    Yamamoto, M
    COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 871 - 876
  • [22] SILICON SCHOTTKY BARRIER DIODE WITH NEAR-IDEAL I-V CHARACTERISTICS
    LEPSELTE.MP
    SZE, SM
    BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (02): : 195 - +
  • [23] Simulation and analysis of the I-V characteristics of a Schottky diode containing barrier inhomogeneities
    Chand, S
    Kumar, J
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (07) : 899 - 906
  • [24] THE TEMPERATURE DEPENDENT IDEALITY FACTOR EFFECT ON I-V CHARACTERISTICS OF SCHOTTKY DIODE
    Modi, B. P.
    Dhimmar, J. M.
    2012 1ST INTERNATIONAL CONFERENCE ON EMERGING TECHNOLOGY TRENDS IN ELECTRONICS, COMMUNICATION AND NETWORKING (ET2ECN), 2012,
  • [25] Analytical simulation of I-V characteristics for self-biased channel diode
    Sugawara, Fumihiko
    Endo, Morio
    Kudoh, Tsugutomo
    Hoshi, Hideaki
    Yamaguchi, Hideo
    Ohnuma, Koichi
    IEEJ Transactions on Electronics, Information and Systems, 2012, 132 (09) : 1429 - 1436
  • [26] Effect of band gap narrowing on GaAs tunnel diode I-V characteristics
    Lebib, A.
    Hannanchi, R.
    Beji, L.
    EL Jani, B.
    PHYSICA B-CONDENSED MATTER, 2016, 502 : 93 - 96
  • [27] Reverse I-V characteristics of Au/semi-insulating GaAs(100)
    Luo, YL
    Chen, TP
    Fung, S
    Beling, CD
    SOLID STATE COMMUNICATIONS, 1997, 101 (09) : 715 - 720
  • [28] Layer-engineered I-V characteristics of p-Si/WS2 Van der Waals Heterostructure diode
    Kapatel, Sanni
    Sumesh, C. K.
    Pataniya, Pratik
    Solanki, G. K.
    Patel, K. D.
    EUROPEAN PHYSICAL JOURNAL PLUS, 2017, 132 (04):
  • [29] Layer-engineered I-V characteristics of p-Si/WS2 Van der Waals Heterostructure diode
    Sanni Kapatel
    C. K. Sumesh
    Pratik Pataniya
    G. K. Solanki
    K. D. Patel
    The European Physical Journal Plus, 132
  • [30] Analysis of reverse I-V characteristics of c-Si/PS heterojunctions
    Islam, N
    Ram, SK
    Kumar, S
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 356 - 359
12345