Reverse I-V characteristics of a diode-connected heterostructure MESFET

被引：0
|
作者：
Burzin S.B. [1 ]
Starosel'Skii V.I. [1 ]
Shmelev S.S. [1 ]
机构：
[1] Moscow Institute of Electronic Technology (Technical University), Moscow
来源：
Russian Microelectronics | 2007年 / 36卷 / 06期
关键词：
85.40.-e;
D O I：
10.1134/S1063739707060091
中图分类号：
学科分类号：
摘要：
The reverse gate current of heterostructure MESFETs is studied experimentally. The behavior of the reverse I-V characteristic is shown to be consistent with the tunneling mechanism of the current. The curve is discussed with regard to two special features of a planar device configuration: the full depletion of the doped layer and the δ-shaped character of the doping profile. © 2007 Pleiades Publishing, Ltd.
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收藏
页码：415 / 421
页数：6
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