The effect of annealing on electrical properties of graphene/ZnO schottky contact

Graphene/ZnO schottky contacts was fabricated by the sol–gel method. The results showed that the crystallization of the ZnO films was improved with increasing of annealing temperature and a grain growth demonstrates in the preferred direction of (002). The graphene/ZnO schottky contact ideality factor decreased and barrier height values increased with increasing of annealing temperature. This result can be explained by weakening of the Fermi level pinning owing to the reduction of oxygen vacancies at the interface.