Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure

被引：0
|
作者：
Chunzhou Shi
Ling Yang
Meng Zhang
Hao Lu
Mei Wu
Bin Hou
Xuerui Niu
Qian Yu
Wenliang Liu
Wenze Gao
Xiaohua Ma
Yue Hao
机构：
[1] Xidian University,School of Advanced Materials and Nanotechnology
[2] Xidian University,State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology
来源：
Science China Information Sciences | 2024年 / 67卷
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摘要：
The direct current and radio frequency of DCGC-HEMT and DCTB-HEMT were systematically investigated. Owing to the utilization of a graded-AlGaN bottom barrier to provide more carriers and shield traps in the buffer, DCGC-HEMT exhibited greater saturated drain current and suppression in drain lag, enabling it to show greater output performance than DCTB-HEMT. The improvement in the former’s superior large-signal characteristic indicates its potential for high-performance RF PA applications.
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