Design and fabrication of highly dispersive semiconductor double-chirped mirrors

被引：0
|
作者：
Agata Jasik
Maciej Dems
Paweł Wnuk
Piotr Wasylczyk
Anna Wójcik-Jedlińska
Kazimierz Regiński
Łukasz Zinkiewicz
Krzysztof Hejduk
机构：
[1] Institute of Electron Technology,Institute of Physics
[2] Lodz University of Technology,Faculty of Physics, Institute of Experimental Physics
[3] Institute of Physical Chemistry Polish Academy of Sciences,undefined
[4] University of Warsaw,undefined
来源：
Applied Physics B | 2014年 / 116卷
关键词：
GaAs; Dispersion Compensation; Group Delay Dispersion; AlAs Layer; Semiconductor Saturable Absorber;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report on the development of semiconductor double-chirped mirrors with the group delay dispersion of −3,800 ± 100 fs2 in the wavelength range between 1,058 ÷ 1,064 nm and reflectivity of 99.1 %. The simplified plane-wave reflection transfer method was used to design the mirror multilayer stack. The mirror contains an epitaxial AlAs/GaAs structure topped with a SiNx antireflective layer.
引用
收藏
页码：141 / 146
页数：5
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