Structural evolution and electronic properties of phosphorus-doped hydrogenated amorphous silicon thin films deposited by PECVD

被引：0
|
作者：
Jian He
Wei Li
Rui Xu
KangCheng Qi
YaDong Jiang
机构：
[1] University of Electronic Science and Technology of China,School of Optoelectronic Information
[2] University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices
来源：
Science China Technological Sciences | 2013年 / 56卷
关键词：
a-Si: H; PECVD; Raman; FTIR; ESR;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon (a-Si: H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD) at various substrate temperatures. Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to evaluate the structural evolution, meanwhile, electronic-spin resonance (ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si: H thin films. The results revealed that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.
引用
收藏
页码：103 / 108
页数：5
相关论文
共 50 条
  • [1] Structural evolution and electronic properties of phosphorus-doped hydrogenated amorphous silicon thin films deposited by PECVD
    He Jian
    Li Wei
    Xu Rui
    Qi KangCheng
    Jiang YaDong
    [J]. SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2013, 56 (01) : 103 - 108
  • [2] Structural evolution and electronic properties of phosphorus-doped hydrogenated amorphous silicon thin films deposited by PECVD
    HE Jian
    LI Wei
    XU Rui
    QI KangCheng
    JIANG YaDong
    [J]. Science China Technological Sciences, 2013, (01) : 103 - 108
  • [3] Structural evolution and electronic properties of phosphorus-doped hydrogenated amorphous silicon thin films deposited by PECVD
    HE Jian
    LI Wei
    XU Rui
    QI KangCheng
    JIANG YaDong
    [J]. Science China(Technological Sciences)., 2013, 56 (01) - 108
  • [4] Structure and properties of hydrogenated amorphous silicon carbide thin films deposited by PECVD
    Zhang, Yiying
    Du, Piyi
    Zhang, Ran
    Han, Gaorong
    Weng, Wenjian
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (12-13) : 1435 - 1439
  • [5] Structural evolution and electronic properties of n-type doped hydrogenated amorphous silicon thin films
    He, Jian
    Li, Wei
    Xu, Rui
    Qi, Kang-Cheng
    Jiang, Ya-Dong
    [J]. 2011 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE AND EXHIBITION (ACP), 2012,
  • [6] Structural evolution and electronic properties of n-type doped hydrogenated amorphous silicon thin films
    He, Jian
    Li, Wei
    Xu, Rui
    Qi, Kang-Cheng
    Jiang, Ya-Dong
    [J]. DISPLAY, SOLID-STATE LIGHTING, PHOTOVOLTAICS, AND OPTOELECTRONICS IN ENERGY III, 2011, 8312
  • [7] Experimental Investigation of Microstructure and Piezoresistive Properties of Phosphorus-doped Hydrogenated Nanocrystalline Silicon Thin Films Prepared by PECVD
    Pan, Haibin
    Ding, Jianning
    Cheng, Guanggui
    Cao, Baoguo
    [J]. MICRO-NANO TECHNOLOGY XV, 2014, 609-610 : 208 - +
  • [8] Structural evolution and mechanical properties of nitrogen doped hydrogenated amorphous silicon thin films
    Xu, Rui
    Yang, Kai
    Zhao, Tianqi
    Jiang, Li
    [J]. AIP ADVANCES, 2020, 10 (08)
  • [9] Optical Properties of Hydrogenated Amorphous Silicon Thin Film Deposited by PECVD
    Li, Yingge
    Du, Dongxing
    [J]. 2010 INTERNATIONAL CONFERENCE ON INFORMATION, ELECTRONIC AND COMPUTER SCIENCE, VOLS 1-3, 2010, : 788 - +
  • [10] Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon
    Terukov, EI
    Kuznetsov, AN
    Parshin, EO
    Weiser, G
    Kuehne, H
    [J]. SEMICONDUCTORS, 1997, 31 (07) : 738 - 739
12345