Structural evolution and electronic properties of phosphorus-doped hydrogenated amorphous silicon thin films deposited by PECVD

被引：0
|
作者：
HE Jian [1 ]
LI Wei [2 ]
XU Rui [1 ]
QI KangCheng [1 ]
JIANG YaDong [2 ]
机构：
[1] School of Optoelectronic Information,University of Electronic Science and Technology of China
[2] State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China
来源：
Science China Technological Sciences | 2013年 / 01期
基金：
中央高校基本科研业务费专项资金资助;
关键词：
a-Si:H; PECVD; Raman; FTIR; ESR;
D O I：
暂无
中图分类号：
TB383.2 [];
学科分类号：
070205 ; 080501 ; 1406 ;
摘要：
The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon(a-Si:H) thin films was investigated.Samples with different features were prepared by plasma enhanced chemical vapor deposition(PECVD) at various substrate temperatures.Raman spectroscopy and Fourier transform infrared(FTIR) spectroscopy were used to evaluate the structural evolution,meanwhile,electronic-spin resonance(ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin films.The results revealed that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.
引用
收藏
页码：103 / 108
页数：6
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