Growth of active Nd-doped YAP thin-film waveguides by laser ablation

被引:0
|
作者
J. Šonský
J. Lančok
M. Jelínek
J. Oswald
V. Studnička
机构
[1] Institute of Physics,
[2] Academy of Sciences of the Czech Republic,undefined
[3] Na Slovance 2,undefined
[4] 180 40 Prague 8,undefined
[5] Czech Republic (Fax: +420-2/821227,undefined
[6] E-mail: jelinek@fzu.cz),undefined
来源
Applied Physics A | 1998年 / 66卷
关键词
PACS: 42.70 Hj; 81.15 Fg; 81.65 Cf;
D O I
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摘要
(YAP) thin films as a promising material for application in a planar waveguide laser has been studied. The films have been grown on sapphire(0001) and YAP(001) substrates by laser ablation. The influence of the substrate temperature and ambient oxygen pressure on the crystalline structure, concentration of Nd incorporated into films, and consequent luminescence spectra were investigated. The waveguiding properties were observed and refractive index of the films was evaluated.
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页码:583 / 586
页数:3
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