Luminescence properties of thin films prepared by laser ablation of Nd-doped potassium gadolinium tungstate

被引：0

作者：

P.A. Atanasov

A. Perea

M. Jiménez de Castro

J.A. Chaos

J. Gonzalo

C.N. Afonso

J. Perrière

机构：

[1] Instituto de Optica,

[2] CSIC,undefined

[3] Serrano 121,undefined

[4] 28 006 Madrid,undefined

[5] Spain,undefined

[6] Groupe de Physique des Solides,undefined

[7] Universités Paris VII et Paris VI,undefined

[8] CNRS UMR 7588,undefined

[9] Tour 23,undefined

[10] 2 Place Jussieu 75 251,undefined

[11] Paris Cedex 05,undefined

[12] France,undefined

来源：

Applied Physics A | 2002年 / 74卷

关键词：

PACS: 81.15.Fg; 42.70.Hj; 78.20.Ek;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Optically active thin films on Si substrates have been produced by laser ablation of a Nd-doped potassium gadolinium tungstate (Nd:KGW) single crystal. Films grown at low oxygen pressures (<0.6 mbar) are potassium-deficient and appear to be mainly disordered. They show a poor photoluminescence (PL) performance that improves upon annealing in air at temperatures in the range 700–1000 °C. Films grown at high oxygen pressure (1 mbar) show instead good stoichiometry and the presence of a dominant textured gadolinium-tungstate phase compared to KGW. These films have low absorption, a refractive index close to that of bulk KGW and good PL performance, the emission lifetimes being longer (τ>150 μs) under certain conditions than those measured in the single-crystal material.

引用

页码：109 / 113

页数：4

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